The device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :D :D :cool: :D ;)

anThe device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :cool: ;) :P :P :o :mad:

The device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :( :cool: ;) :D :D :D

The device requires only a single 3.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the
program and erase operations. :o :mad: :D :P

Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices. :o :) :mad: :o

Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry. :cool:

anThe device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :cool: ;) :P :P :o

The device requires only a single 3.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the
program and erase operations. :o :mad: :D :P :mad: :cool: :D

The device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :o :cool:

anThe device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :cool: ;)

The device requires only a single 3.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the
program and erase operations. :D :cool: :o

To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.

The device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states.

Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices. :D :o

Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry. :cool: :D :cool: :( :mad: :( ;)

Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry. :) :D ;)

The device offers access times of 70, 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. :( :cool: ;) :D

To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls. :mad: :o :o

To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls. :mad: :o :P

To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls. :cool: ;) ;)